63-7037-12 英飞凌1200V31.9A, SiC肖特基二极管,2+TabPinTO-220IDH10G120C5XKSA1 IDH10G120C5XKSA1
电子元件控制设备

63-7037-12 英飞凌1200V31.9A, SiC肖特基二极管,2+TabPinTO-220IDH10G120C5XKSA1 IDH10G120C5XKSA1

型号: 63-7037-12
品牌: Infineon

产品描述

产品型号: 63-7037-12产品品牌: Infineon 功能 thinQ! Silicon Carbid […]

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产品详细内容

产品型号: 63-7037-12
产品品牌: Infineon

功能

  • thinQ! Silicon Carbide (SiC) Schottky Diode, Infineon
  • Infineon thinQ! The fifth generation uses new thin wafer technology in SiC Schottky barrier diodes to improve thermal properties. SiC Schottky diode devices have features for high-voltage power semiconductors, such as high breakdown field strength and thermal conductivity for higher efficiency levels. This latest generation is suitable for communications SMPS, high-end servers, UPS systems, motor drives, solar inverters, PC silver boxes, lighting applications and more.
  • Reducing EMI

规格

  • 数量:1套 (500个)
  • 最大连续正向电流:31.9A
  • 每个芯片的元素数:1
  • 峰值反向重复电压:1200V
  • 安装类型:通孔
  • 包类型:TO-220
  • 二极管技术:SiC肖特基
  • Pin计数:2+Tab
  • 最大正向电压降:2.6V
  • 峰值无重复前突电流:99A
  • 代码号:133-8556

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