产品详细内容
产品型号: 63-7020-52
产品品牌: Infineon
功能
- N-Channel Power MOSFET 100 V, Infineon
- Infineon's discrete HEXFETR power MOSFET products include an N-channel device in a surface mount package with a lead. In addition, it includes a form factor for almost any board layout or thermal design challenge. Benchmarking resistance across the range reduces conductive loss, enabling optimal system efficiency.
规格
- 数量:1袋 (2个)
- 信道类型:N
- 最大持续降水电流:180 A
- 最大漏源电压:100 V
- 最大泄漏源电阻:4.7 mΩ
- 最大门限电压:4V
- 最小门限电压:2V
- 最大栅源电压:-20 V,+20 V
- 包类型:D2PAK (TO-263)
- 安装类型:表面安装
- 销数:3
- 通道模式:增强
- Category:功率MOSFET
- 最大功耗:375 W
- 每个芯片的元素数:1
- 代码号:130-0999
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